Beyond the Desert 99 : Accelerator, Non-accelerator and Space Approaches into the Next Millennium, Second International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 6-12 June 1999
Book Details
Format
Hardback or Cased Book
ISBN-10
0750307315
ISBN-13
9780750307314
Publisher
Taylor & Francis Ltd
Imprint
Institute of Physics Publishing
Country of Manufacture
GB
Country of Publication
GB
Publication Date
Jan 1st, 2000
Print length
1268 Pages
Weight
2,063 grams
Product Classification:
Particle & high-energy physicsSpectrum analysis, spectrochemistry, mass spectrometry
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Ksh 123,300.00
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A reference on silicon devices and heterostructures. It reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers.
Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.
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